sep. 2001 mitsubishi nch igbt CT60AM-18F insulated gate bipolar transistor CT60AM-18F outline drawing dimensions in mm to-3pl application microwave oven, electromagnetic cooking devices, rice-cookers 900 25 30 60 120 40 180 ?0 ~ +150 ?0 ~ +150 v ge = 0v collector-emitter voltage gate-emitter voltage peak gate-emitter voltage collector current collector current (pulse) emitter current maximum power dissipation junction temperature storage temperature v v v a a a w c c v ces v ges v gem i c i cm i e p c t j t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit v ces ............................................................................... 900v i c ......................................................................................... 60a integrated fast-recovery diode small tail loss low v ce(sat) 20max. 5 2 6 26 20.6min. 2 1 0.5 2.5 4.0 3.2 5.45 5.45 1 3 ? gate ? collector ? emitter ? collector ? ??? ?? ? ? mitsubishi nch igbt CT60AM-18F insulated gate bipolar transistor
sep. 2001 mitsubishi nch igbt CT60AM-18F insulated gate bipolar transistor i ces i ges v ge(th) v ce(sat) c ies c oes c res t d(on) t r t d(off) t f etail itail v ec t rr r th(j-c) r th(j-c) ma a v v pf pf pf s s s s mj/pls a v s c/w c/w 2.0 4.0 2.1 4400 115 75 0.05 0.1 0.2 0.3 0.6 6.0 2.2 0.5 1.0 0.5 6.0 2.7 1.0 12 3.0 2.0 0.69 4.0 electrical characteristics (tch = 25 c) collector-emitter leakage current gate-emitter leakage current gate-emitter threshold voltage collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time tail loss tail current emitter-collector voltage diode reverse recovery time thermal resistance (igbt) thermal resistance (diode) symbol unit parameter test conditions limits min. typ. max. v ce = 900v, v ge = 0v v ge = 20v, v ce = 0v v ce = 10v, i c = 6ma i c = 60a, v ge = 15v v ce = 25v, v ge = 0v, f = 1mhz v cc = 300v, i c = 60a, v ge = 15v, r g = 10 ? i cp = 60a, t j = 125 c, dv/dt = 200v/ s i e = 60a, v ge = 0v i e = 60a, dis/dt = 20a/ s junction to case junction to case 0 40 80 120 160 012345 p d = 180w v ge = 20v tc = 25 c pulse test 0 1 2 3 4 5 0 4 8 12 16 20 tc = 25 c pulse test 30a 60a 15a i c = 120a 10v 15v 8v 7v 9v collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage vs. gate-emitter voltage (typical) collector current vs. collector-emitter voltage (typical) gate-emitter voltage v ge (v) collector-emitter saturation voltage v ce(sat) (v) performance curves
sep. 2001 mitsubishi nch igbt CT60AM-18F insulated gate bipolar transistor 0 40 80 120 160 0481216 tc = 25 c v ce = 5v pulse test 10 0 10 1 23 57 10 2 23 57 10 -1 10 0 23 57 10 1 23 57 10 2 23 57 10 3 23 57 10 3 2 3 5 7 10 4 2 3 5 7 10 3 10 4 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 0 10 1 23 57 10 2 2 3 5 7 10 1 10 3 2 3 5 7 10 2 23 57 10 2 2 3 5 7 10 1 0 4 8 12 16 20 50 0150 100 250 200 350 300 i c = 60a tj = 25 c v ce = 250v 0 0.8 1.6 2.4 3.2 80 100 60 40 20 0 tc = 25 c v ge = 0v pulse test tj = 25 c v ge = 0v f = 1mhz cies coes cres tj = 25 c v cc = 300v v ge = 15v r g = 10 ? t d(off) t d(on) t r t f tj = 25 c v cc = 300v v ge = 15v i c = 60 a t d(off) t d(on) t r t f 400v 600v collector current vs. gate-emitter voltage (typical) gate-emitter voltage v ge (v) collector current i c (a) switching time vs. gate resistance (typical) gate resistance r g ( ? ) switching characteristics (typical) collector current i c (a) switching time (ns) capacitance vs. collector-emitter voltage (typical) collector-emitter voltage v ce (v) capacitance cies, coes, cres (pf) emitter-collector voltage v ec (v) emitter current i e (a) gate charge q g (nc) gate-emitter voltage vs. gate charge characteristic (typical) emitter current vs. emitter-collector voltage (typical) gate-emitter voltage v ge (v) switching time (ns)
sep. 2001 mitsubishi nch igbt CT60AM-18F insulated gate bipolar transistor 0 4 5 6 1 2 3 7 8 e40 0 40 80 150 120 v ce = 10v i c = 6ma 10 e2 10 e1 2 3 4 5 7 10 e2 10 e1 2 2 3 4 5 7 10 0 2 3 4 5 7 10 e4 57 10 e5 23 57 10 e4 23 57 10 e3 23 57 10 e2 10 0 23 57 10 e1 23 57 10 e1 2 3 5 7 2 3 5 7 10 e2 10 e1 2 3 5 7 2 3 5 7 10 1 10 0 10 e2 2 3 5 7 10 e3 57 10 e4 57 10 e5 23 23 57 10 e3 23 57 10 e2 23 57 10 e1 10 1 23 57 10 0 23 57 threshold voltage vs. junction temperature (typical) gate-emitter threshold voltage v ge (th) (v) igbt transient thermal impedance characteristics pulse width t w (s) transient thermal impedance z th (j e c) (?c/ w) diode transient thermal impedance characteristics pulse width t w (s) transient thermal impedance z th (j e c) (?c/ w) junction temperature t j (?c)
|
